# Deterministic single ion implantation of rare-earth ions for nanometer resolution colour center generation

## TL;DR

This paper demonstrates a method for deterministic implantation of single rare-earth ions into a solid state matrix with nanometer precision, enabling scalable quantum device fabrication.

## Contribution

It introduces a technique for deterministic single Pr$^+$ ion implantation with high placement accuracy and conversion yield for quantum color center creation.

## Key findings

- Implanted Pr$^+$ ions focused to 30 nm diameter.
- Achieved up to 50% conversion yield into active color centers.
- Placement accuracy better than 50 nm.

## Abstract

Single dopant atoms or dopant-related defect centers in a solid state matrix provide an attractive platform for quantum simulation of topological states, for quantum computing and communication, due to their potential to realize a scalable architecture compatible with electronic and photonic integrated circuits. The production of such quantum devices calls for deterministic single atom doping techniques because conventional stochastic doping techniques are cannot deliver appropriate architectures. Here, we present the fabrication of arrays of praseodymium color centers in YAG substrates, using a deterministic source of single laser-cooled Pr$^+$ ions. The beam of single Pr$^+$ ions is extracted from a Paul trap and focused down to 30(9) nm. Using a confocal microscope we determine a conversion yield into active color centers up to 50% and realizing a placement accuracy of better than 50 nm.