Cu-substituted Fe2P: An emerging candidates for magnetic RAM application

TL;DR

This study identifies Cu-substituted Fe2P as a promising, environmentally friendly material with suitable magnetic properties for use in STT-MRAM technology, potentially replacing current materials.

Contribution

The paper introduces Cu-substituted Fe2P as a new candidate for magnetic tunnel junctions in STT-MRAM, supported by first-principles calculations and simulations.

Findings

Exhibits moderate perpendicular magnetic anisotropy

Shows large tunnel magneto-resistance

Has high thermal stability and transition temperature

Abstract

We propose that Cu-substituted Fe$_2$P, (Fe$_{1-x}$Cu$_x$)$_2$P ($x\sim 0.16$), to be an outstanding contender for the STT-MRAM application. Using first principles based calculations in the framework of density functional theory and through Monte Carlo simulations, we demonstrate that this material can be used as ferromagnetic electrode in the magnetic tunnel junction (MTJ) of STT-MRAM due to its moderate perpendicular magnetic anisotropy (PMA), large tunnel magneto-resistance (TMR), good thermal stability and high ferromagnetic transition temperature. We point out that the simplicity in the synthesis, huge abundance, and non-toxicity make this material a very good candidate to replace the current MTJ materials for STT-MRAM such as FePt,~FeCo or FeCoB.