2D Semiconductor Nonlinear Plasmonic Modulators

TL;DR

This paper introduces the first 2D semiconductor nonlinear plasmonic modulator using WSe2 monolayer, achieving significant transmission change and ultralow switching energy through strong exciton-SPP coupling.

Contribution

It demonstrates a novel 2D semiconductor-based nonlinear plasmonic modulator with high modulation depth and ultralow energy, advancing plasmonic device technology.

Findings

73% change in transmission achieved

Modulation depth of 4.1% demonstrated

Ultralow switching energy of 40 aJ estimated

Abstract

A plasmonic modulator is a device that controls the amplitude or phase of propagating plasmons. In a pure plasmonic modulator, the presence or absence of a pump plasmonic wave controls the amplitude of a probe plasmonic wave through a channel. This control has to be mediated by an interaction between disparate plasmonic waves, typically requiring the integration of a nonlinear material. In this work, we demonstrate the first 2D semiconductor nonlinear plasmonic modulator based on a WSe2 monolayer integrated on top of a lithographically defined metallic waveguide. We utilize the strong coupling between the surface plasmon polaritons, SPPs, and excitons in the WSe2 to give a 73 percent change in transmission through the device. We demonstrate control of the propagating SPPs using both optical and SPP pumps, realizing the first demonstration of a 2D semiconductor nonlinear plasmonic modulator, with a modulation depth of 4.1 percent, and an ultralow switching energy estimated to be 40 aJ.