Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration and Fermi level position

TL;DR

This study investigates how ion irradiation affects the magnetic and transport properties of (In,Fe)Sb diluted magnetic semiconductors, revealing that ferromagnetism remains robust despite variations in charge carrier concentration and Fermi level position.

Contribution

It demonstrates the weak dependence of ferromagnetism on charge carrier concentration in (In,Fe)Sb, highlighting the material's robustness for spintronic applications.

Findings

Magnetic properties are resistant to changes in charge carrier concentration.

Conductivity type conversion from n-type to p-type occurs with ion irradiation.

Ferromagnetism persists despite significant Fermi level shifts.

Abstract

The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the ptype has been found. The ion fluence at which the conversion occurs depends on the Fe concentration in the InSb matrix. Magnetotransport properties of the two-phase (In,Fe)Sb layer are strongly affected by ferromagnetic Fe inclusions. An influence of the number of electrically active radiation defects on the magnetic properties of the single-phase In0.75Fe0.25Sb DMS has been found. At the same time, the results show that the magnetic properties of the In0.75Fe0.25Sb DMS are quite resistant to significant changes of the charge carrier concentration and the Fermi level position. The results confirm a weak interrelation between the ferromagnetism and the charge carrier concentration in (In,Fe)Sb.