Probing the Origin of Extreme Magnetoresistance in Pr/Sm Mono-Antimonides/Bismuthides
Zhongzheng Wu, Fan Wu, Peng Li, Chunyu Guo, Yi Liu, Zhe Sun, Cheng-Maw, Cheng, Tai-Chang Chiang, Chao Cao, Huiqiu Yuan, and Yang Liu

TL;DR
This study combines spectroscopy and transport measurements to investigate the origin of extreme magnetoresistance in Pr/Sm mono-antimonides/bismuthides, finding electron-hole compensation and band structure features as key factors.
Contribution
It demonstrates that the extreme magnetoresistance arises from electron-hole compensation and not topological surface states, providing a comprehensive understanding of the phenomenon.
Findings
Electron-hole compensation explains the magnetoresistance.
Bulk band structure shows no temperature dependence from 10K to 150K.
Carrier mobility increases at low temperatures, suppressing magnetoresistance.
Abstract
Combining angle-resolved photoemission spectroscopy and magneto-transport measurements, we systematically investigated the possible origin of the extreme magnetoresistance in Pr/Sm mono-antimonides/bismuthides (PrSb, SmSb, PrBi, SmBi). Our photoemission measurements reveal that the bulk band inversion and surface states are absent (present) in Pr/Sm antimonides (bismuthides), implying that topological surface states are unlikely to play an important role for the observed extreme magnetoresistance. We found that the electron-hole compensation is well satisfied in all these compounds and the bulk band structure exhibits no obvious temperature dependence from 10 K up to 150 K. Simultaneous fittings of the magnetoresistance and Hall coefficient reveal that the carrier mobility is dramatically enhanced at low temperature, which naturally explains the suppression of extreme magnetoresistance…
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