# Ultrafast dynamics and surface plasmon properties of Silicon upon irradiation with mid-infrared femtosecond laser pulses

## TL;DR

This paper theoretically explores ultrafast carrier dynamics, surface plasmon excitation, and damage thresholds in Silicon irradiated with mid-infrared femtosecond lasers, revealing wavelength-dependent effects and mechanisms.

## Contribution

It provides new insights into the ultrafast processes, surface plasmon formation, and damage thresholds of Silicon under mid-IR femtosecond laser irradiation, an area previously unexplored.

## Key findings

- Surface plasmons are weakly bound and have longer lifetimes at higher wavelengths.
- Damage thresholds increase with pulse duration following a power law.
- Lower damage observed at 2.5 μm compared to 2.2 μm for longer pulse durations.

## Abstract

We present a theoretical investigation of the yet unexplored ultrafast processes and dynamics of the produced excited carriers upon irradiation of Silicon with femtosecond pulsed lasers in the mid-infrared (mid-IR) spectral region. The evolution of the carrier density and thermal response of the electron-hole and lattice subsystems are analysed for various wavelengths {\lambda}L in the range between 2.2 {\mu}m and 3.3 {\mu}m where the influence of two and three-photon absorption mechanisms is explored. The role of induced Kerr effect is highlighted and it manifests a more pronounced influence at smaller wavelengths in the mid-IR range. Elaboration on the conditions that leads to surface plasmon (SP) excitation indicate the formation of weakly bound SP waves on the material surface. The lifetime of the excited SP is shown to rise upon increasing wavelength yielding a larger than the one predicted for higher laser frequencies. Calculation of damage thresholds for various pulse durations {\tau}p show that they rise according to a power law (~\tau_p^{\zeta(\lambda_L) ) where the increasing rate is determined by the exponent \zeta(\lambda_L). Investigation of the multi-photon absorption rates and impact ionization contribution at different {\tau}p manifests a lower damage for {\lambda}L=2.5 {\mu}m compared to that for {\lambda}L=2.2 {\mu}m for long {\tau}p.

---
Source: https://tomesphere.com/paper/1902.02673