Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells
Sihua Zhong, Monica Morales-Masis, Mathias Mews, Lars Korte, Quentin, Jeangros, Weiliang Wu, Mathieu Boccard, and Christophe Ballif

TL;DR
This paper demonstrates that co-sputtering ZnO:Al with SiO2 creates effective electron-selective contacts for silicon solar cells, achieving high efficiency and revealing key parameters for optimizing device performance.
Contribution
It introduces a novel AZO:SiO2 co-sputtered film as an electron-selective contact, achieving record efficiency with simplified fabrication.
Findings
Optimal AZO:SiO2 thickness is 2 nm for best performance.
The VOC is insensitive to AZO:SiO2 work function at optimal thickness.
Achieved 19.5% efficiency with AZO/Al contact.
Abstract
In recent years, considerable efforts have been devoted to developing novel electron-selective materials for crystalline Si (c-Si) solar cells with the attempts to simplify the fabrication process and improve efficiency. In this study, ZnO:Al (AZO) is co-sputtered with SiO2 to form AZO:SiO2 films with different SiO2 content. These nanometer-scale films, deposited on top of thin intrinsic hydrogenated amorphous silicon films and capped with low-work-function metal (such as Al and Mg), are demonstrated to function effectively as electron-selective contacts in c-Si solar cells. On the one hand, AZO:SiO2 plays an important role in such electron-selective contact and its thickness is a critical parameter, thickness of 2 nm showing the best. On the other hand, at the optimal thickness of AZO:SiO2, the open circuit voltage (VOC) of the solar cells is found to be relatively insensitive to…
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Taxonomy
TopicsSilicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence
