# Vertical, electrolyte-gated organic transistors: continuous operation in   the MA/cm$^2$ regime and use as low-power artificial synapses

**Authors:** Jakob Lenz, Fabio del Giudice, Fabian R. Geisenhof, Felix Winterer, R., Thomas Weitz

arXiv: 1902.01854 · 2019-10-02

## TL;DR

This paper demonstrates a novel vertical electrolyte-gated organic transistor with 40 nm channel length, achieving high current densities and modulation ratios, suitable for low-power artificial synapses and neural network applications.

## Contribution

Introduction of a new vertical transistor design with electrolyte gating that achieves high performance in organic polymers at nanoscopic scales.

## Key findings

- High on-state current densities above 3 MA/cm²
- On/off current modulation ratios up to 10^8
- Large transconductance of up to 5000 S/m

## Abstract

Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of choice at these nanoscopic dimensions. Here, we show that using a novel vertical field-effect transistor design with a channel length of only 40 nm and a footprint of 2 x 80 x 80 nm$^2$, high electrical performance with organic polymers can be realized when using electrolyte gating. Our organic transistors combine high on-state current densities of above 3 MA/cm$^2$, on/off current modulation ratios of up to 108 and large transconductances of up to 5000 S/m. Given the high on-state currents at yet large on/off ratios, our novel structures also show promise for use in artificial neural networks, where they could operate as memristive devices with sub 100 fJ energy usage.

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Source: https://tomesphere.com/paper/1902.01854