# Impurity states and Localization in Bilayer Graphene: the Low Impurity Concentration Regime

## TL;DR

This paper investigates how non-magnetic impurities affect electronic states and localization in bilayer graphene at low impurity concentrations, revealing strong localization near the Dirac point.

## Contribution

It provides a detailed analysis of impurity spectral densities and local density of states in bilayer graphene under various conditions, highlighting localization effects.

## Key findings

- Impurity spectral densities vary with concentration and gate fields.
- Strong localization occurs near the Dirac point.
- Impurities significantly modify local density of states.

## Abstract

We study the problem of non-magnetic impurities adsorbed on bilayer graphene in the diluted regime. We analyze the impurity spectral densities for various concentrations and gate fields. We also analyze the effect of the adsorbate on the local density of states (LDOS) of the different C atoms in the structure and present some evidence of strong localization for the electronic states with energies close to the Dirac point.