# Gate-tunable Electronic Transport in p-type GaSb Quantum Wells

## TL;DR

This study explores the electronic properties of p-type GaSb quantum wells, revealing significant spin splitting and coherence effects, establishing the material as a promising platform for two-dimensional hole physics research.

## Contribution

It provides the first detailed characterization of spin-split subbands and quantum transport phenomena in GaSb quantum wells, supported by experimental and theoretical analysis.

## Key findings

- Significant spin splitting due to spin-orbit coupling
- Measured carrier densities, effective masses, and scattering times
- Observation of weak anti-localization effects

## Abstract

We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gate-tunable devices. Measurements probing the valence band structure of GaSb unveil a significant spin splitting of the ground subband induced by spin-orbit coupling. We characterize the carrier densities, effective masses and quantum scattering times of these spin-split subbands and find that the results are in agreement with band structure calculations. Additionally, we study the weak anti-localization correction to the conductivity present around zero magnetic field and obtain information on the phase coherence. These results establish GaSb quantum wells as a platform for two-dimensional hole physics and lay the foundations for future experiments in this system.