Using Floating Gate Memory to Train Ideal Accuracy Neural Networks
Sapan Agarwal, Diana Garland, John Niroula, Robin B, Jacobs-Gedrim,, Alex Hsia, Michael S. Van Heukelom, Elliot Fuller, Bruce Draper, Matthew J., Marinella

TL;DR
This paper demonstrates that floating gate SONOS transistors can be used to train neural networks with near-ideal accuracy, offering significant improvements in energy efficiency, speed, and area over traditional SRAM-based hardware.
Contribution
It introduces a novel neural training approach using SONOS transistors operating in the subthreshold regime, achieving high accuracy and efficiency improvements.
Findings
Achieves near-ideal accuracy on MNIST with multiple devices per weight.
Single-device implementation reaches within 1% of ideal accuracy.
Energy efficiency increases by 120X compared to SRAM-based ASICs.
Abstract
Floating gate SONOS (Silicon-Oxygen-Nitrogen-Oxygen-Silicon) transistors can be used to train neural networks to ideal accuracies that match those of floating point digital weights on the MNIST dataset when using multiple devices to represent a weight or within 1% of ideal accuracy when using a single device. This is enabled by operating devices in the subthreshold regime, where they exhibit symmetric write nonlinearities. A neural training accelerator core based on SONOS with a single device per weight would increase energy efficiency by 120X, operate 2.1X faster and require 5X lower area than an optimized SRAM based ASIC.
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
