Interdiffusion in Group IV Semiconductor Material Systems: Applications, Research Methods and Discoveries

TL;DR

This paper reviews the properties, applications, and recent research on interdiffusion behaviors in Group IV semiconductor alloys like SiGe and GeSn, highlighting theories, experimental methods, and key discoveries.

Contribution

It provides a comprehensive overview of interdiffusion in Group IV semiconductors, including recent advances in understanding behaviors of Si-Ge and GeSn systems.

Findings

Si-Ge interdiffusion is faster with higher Ge content and strain.

Recent studies have improved understanding of GeSn interdiffusion behaviors.

The review discusses theories, experimental methods, and practical considerations in the field.

Abstract

Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic and photonic devices. In the growth and processing of these materials, nanometer scale interdiffusion happens that are generally undesirable for device performance. With higher Ge molar fractions and higher compressive strains, Si-Ge interdiffusion can be much faster than dopant diffusion. However, Si-Ge interdiffusion behaviors have not been well understood until recent years. Much less studies are available for GeSn. This review starts with basic properties and the applications of major group IV semiconductors, and then reviews the progress made so far on Si-Ge and Ge-Sn interdiffusion behaviors. Theories, experimental methods, design and practical considerations are discussed together with the key findings in this field.