Controllable Defect Driven Symmetry Change and Domain Structure Evolution in BiFeO3 with Enhanced Tetragonality
Chao Chen, Changan Wang, Xiangbin Cai, Chao Xu, Caiwen Li, Jingtian, Zhou, Zhenlin Luo, Zhen Fan, Minghui Qin, Min Zeng, Xubing Lu, Ping Yang,, Guofu Zhou, Xingsen Gao, Ning Wang, Ye Zhu, Shengqiang Zhou, Deyang Chen,, Jun-Ming Liu

TL;DR
This study demonstrates how ion implantation-induced defect engineering can controllably induce a true super-tetragonal phase with high tetragonality in BiFeO3 thin films, enabling reversible phase transitions and potential polarization enhancement.
Contribution
It introduces a method to precisely control defect concentrations to achieve and manipulate a super-tetragonal phase in BiFeO3, surpassing previous tetragonality limits.
Findings
Achieved a c/a ratio of ~1.3 in BiFeO3.
Demonstrated reversible phase transition with memory effect.
Established defect engineering as a pathway to enhance ferroelectric properties.
Abstract
Defect engineering has been a powerful tool to enable the creation of exotic phases and the discovery of intriguing phenomena in ferroelectric oxides. However, accurate control the concentration of defects remains a big challenge. In this work, ion implantation, that can provide controllable point defects, allows us the ability to produce a controlled defect-driven true super-tetragonal (T) phase with enhanced tetragonality in ferroelectric BiFeO3 thin films. This point defect engineering is found to drive the phase transition from the as-grown mixed rhombohedral-like (R) and tetragonal-like (MC) phase to true tetragonal (T) symmetry. By further increasing the injected dose of He ion, we demonstrate an enhanced tetragonality super-tetragonal (super-T) phase with the largest c/a ratio (~ 1.3) that has ever been experimentally achieved in BiFeO3. A combination of morphology change and…
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