Optimization of $Al/AlO_x/Al$-Layer Systems for Josephson Junctions from a Microstructure Point of View

TL;DR

This study systematically optimizes the structural properties of Al/AlO_x/Al layers for Josephson junctions by analyzing how deposition conditions affect nanoscale features, aiming to improve tunnel barrier homogeneity and device performance.

Contribution

It provides a detailed analysis of how deposition parameters influence the nanoscale structure and homogeneity of Al/AlO_x/Al layers, which was previously underexplored.

Findings

Optimal conditions produce epitaxial Al(111) layers with minimal thickness variation.

Thickness fluctuations of the AlO_x tunnel barrier are minimized on high-quality Al layers.

Understanding growth mechanisms helps improve tunnel barrier uniformity.

Abstract

$Al/AlO_x/Al$-layer systems are frequently used for Josephson junction-based superconducting devices. Although much work has been devoted to the optimization of the superconducting properties of these devices, systematic studies on influence of deposition conditions combined with structural analyses on the nanoscale are rare up to now. We have focused on the optimization of the structural properties of $Al/AlO_x/Al$-layer systems deposited on Si(111) substrates with a particular focus on the thickness homogeneity of the $AlO_x$-tunnel barrier. A standard high-vacuum electron-beam deposition system was used and the effect of substrate pretreatment, different Al-deposition temperatures and Al-deposition rates was studied. Transmission electron microscopy was applied to analyze the structural properties of the $Al/AlO_x/Al$-layer systems to determine the thickness homogeneity of the $AlO_x$ layer, grain size distribution in the Al layers, Al-grain boundary types and the morphology of the $Al/AlO_x$ interface. We show that the structural properties of the lower Al layer are decisive for the structural quality of the whole $Al/AlO_x/Al$-layer system. Optimum conditions yield an epitaxial Al(111) layer on a Si(111) substrate with an Al-layer thickness variation of only 1.6 nm over more than 10 $\mu m$ and large lateral grain sizes up to 1 $\mu m$. Thickness fluctuations of the $AlO_x$-tunnel barrier are minimized on such an Al layer which is essential for the homogeneity of the tunnel current. Systematic variation of the Al-deposition rate and deposition temperature allows to develop an understanding of the growth mechanisms.