Manipulation of magnetization in Pd(100) ultrathin films with quantum well structure using modification of Schottky barrier potentials

TL;DR

This study demonstrates how applying a bias voltage can manipulate the magnetization of Pd(100) ultrathin films by modulating quantum well states through Schottky barrier potential modifications.

Contribution

It introduces a method to control ferromagnetism in ultrathin films via voltage-induced quantum well state adjustments at the interface.

Findings

Magnetization varies with applied bias voltage.

Magnetic moment change depends on Pd film thickness.

Modulation occurs through phase shift changes at the interface.

Abstract

The magnetization of Pd(100) ultrathin films that show ferromagnetism due to quantum well states was manipulated by changing the quantum well state with an applied bias voltage. The voltage dependence of the magnetic moment of Pd/SrTiO$_{3-x}$/Ti/Au intrinsically depends on the Pd film thickness. The induced change in the magnetic moment is due to the modulation of the phase shift at the interface between the Pd thin film and the semiconductor SrTiO$_{3-x}$ substrate.