Modeling of Electrons and Excitons Multiple-Exciton-Generation Dynamics in Silicon Clusters using Many-body Green Function Theory

TL;DR

This paper investigates the dynamics of multiple exciton generation in silicon clusters Si26 and Si46 by calculating inelastic scattering rates of electronic and excitonic states using many-body Green function theory.

Contribution

It introduces a theoretical approach to model exciton dynamics in silicon clusters with detailed calculations of scattering rates using Green function methods.

Findings

Calculated inelastic scattering rates for Si26 and Si46

Provided insights into exciton generation mechanisms in silicon clusters

Advanced understanding of exciton dynamics in nanostructures

Abstract

The electrons and excitons multiple exciton generation dynamics in two silicon clusters, or more specifically the inelastic scattering rates of electronic and excitonic states in the two silicon clusters, Si26 and Si46, are calculated using many-body Green function theory.