S-type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides

TL;DR

This paper demonstrates that semiconducting transition-metal dichalcogenides can host S-type negative differential resistance devices, with a thermal feedback mechanism, enabling applications in neuromorphic computing and signal processing.

Contribution

It experimentally shows S-type NDR in TMDs and identifies thermal feedback as its origin, expanding the material options for NDR-based devices.

Findings

TMDs can host bipolar S-type NDR devices

Thermal feedback mechanism causes NDR in TMDs

Potential for neuromorphic and signal processing applications

Abstract

Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental realization of S-type NDR based on conventional mechanisms poses demanding requirements on materials, which greatly limits their potential applications. Here, we experimentally identify that semiconducting transition metal dichalcogenides (TMDs) can host a bipolar S-type NDR devices. Theoretical simulations indicate that the origin of the NDR in these devices arises from a thermal feedback mechanism. Furthermore, we demonstrate the potential applications of TMDs based S-type NDR device in signal processing and neuromorphic electronics.