Two-Dimensional MoS2 Negative Capacitor Transistors for Enhanced (Super Nernstian) Signal-to-Noise Performance of Next-generation Nano Biosensors

TL;DR

This paper demonstrates that 2D MoS2-based Negative Capacitor FETs significantly improve signal-to-noise ratio in biosensors by leveraging nonlinear charge transduction and noise suppression, enabling more sensitive biomolecule detection.

Contribution

It introduces the use of 2D MoS2 NCFETs for biosensing, showing enhanced SNR through nonlinear charge transduction and Flicker noise suppression.

Findings

Significant SNR improvement in MoS2 NCFET biosensors.

Enhanced sensitivity and noise rejection demonstrated.

Potential for next-generation high-performance nanobiosensors.

Abstract

The successful detection of biomolecules by a Field Effect Transistor-based biosensor (BioFET) is dictated by the sensor's intrinsic Signal-to-Noise Ratio (SNR). The detection limit of a traditional BioFET is fundamentally limited by biomolecule diffusion, charge screening, linear charge to surface-potential transduction, and Flicker noise. In this paper, we demonstrate that the recently introduced transistor technology called Negative Capacitor Field effect transistor (NCFET) offers nonlinear charge transduction and suppression of Flicker noise to dramatically improve the SNR over classical Boltzmann sensors. We quantify the SNR improvement by interpreting the experimental results associated with the signal and noise characteristics of 2D MoS2-based transistors. The combined sensitivity enhancement and noise rejection guarantee a high SNR of the NCBioFET, making this device a promising candidate for realizing advanced integrated nanobiosensors.