# Calculating the Band Structure of 3C-SiC Using sp3d5s*+$\Delta$ Model

## TL;DR

This paper develops a semi-empirical tight binding model incorporating sp3d5s* orbitals and spin-orbit coupling to accurately calculate the band structure of 3C-SiC, validated against experimental data.

## Contribution

It introduces a detailed method for creating a tight binding model for zincblende semiconductors using Slater-Koster integrals, with an optimization process for experimental accuracy.

## Key findings

- High accuracy in band diagram evaluation
- Effective mass calculations match experimental results
- Model successfully reproduces energy levels at high symmetry points

## Abstract

We report on a semi-empirical tight binding model for 3C-SiC including the effect of sp3d5s* orbitals and spin-orbital coupling. In this work, we illustrate in detail the method to develop such a model for semiconductors with zincblende structure, based on Slater-Koster integrals, and we explain the optimization method used to fit the experimental results with such a model. This method shows high accuracy for the evaluation of 3C-SiC band diagram both in terms of the experimental energy levels at high symmetry points and the effective masses.