Spin filtering in CrI$_3$ tunnel junctions

TL;DR

This paper investigates spin-dependent tunneling in CrI3-based junctions, revealing near 100% spin polarization and high tunneling magnetoresistance, advancing understanding of spin filtering in 2D magnetic materials for device applications.

Contribution

It provides first-principles insights into spin filtering mechanisms and charge transfer effects in CrI3 tunnel junctions, highlighting their potential for magnetoresistive device design.

Findings

100% spin polarization in ferromagnetic CrI3 junctions

Tunneling magnetoresistance of about 3,000%

Significant charge transfer from Cu to CrI3

Abstract

The recently discovered magnetism of two-dimensional (2D) van der Waals crystals have attracted a lot of attention. Among these materials is CrI$_3$ - a magnetic semiconductor exhibiting transitions between antiferromagnetic and ferromagnetic orderings under the influence of an applied magnetic field. Here, using first-principles methods based on density functional theory, we explore spin-dependent transport in tunnel junctions formed of fcc Cu (111) electrodes and a CrI$_3$ tunnel barrier. We find about 100% spin polarization of the tunneling current for a ferromagnetically-ordered four-monolayer CrI$_3$ and tunneling magnetoresistance of about 3,000% associated with a change of magnetic ordering in CrI$_3$. This behavior is understood in terms of the spin and wave-vector dependent evanescent states in CrI$_3$ which control the tunneling conductance. We find a sizable charge transfer from Cu to CrI$_3$ which adds new features to the mechanism of spin-filtering in CrI$_3$-based tunnel junctions. Our results elucidate the mechanisms of spin filtering in CrI3 tunnel junctions and provide important insights for the design of magnetoresistive devices based on 2D magnetic crystals.