# Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology

## TL;DR

This paper investigates the optical characteristics of vanadium impurities in 4H silicon carbide, identifying emission wavelengths, lifetimes, and site assignments, with implications for quantum photonics applications.

## Contribution

It provides the first detailed analysis combining experimental and theoretical methods to characterize vanadium defects in 4H SiC for quantum technology.

## Key findings

- Emission at 1.28 μm and 1.33 μm observed
- Optical lifetimes of 163 ns and 43 ns measured
- Site assignment confirmed through group theory and DFT calculations

## Abstract

We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1.33 \mum, with optical lifetimes of 163 ns and 43 ns. Group theory and ab initio density functional supercell calculations enable unequivocal site assignment and shed light on the spectral features of the defects. We conclude with a brief outlook on applications in quantum photonics.