# Timing performance of small cell 3D silicon detectors

## TL;DR

This paper evaluates the timing performance of a small 3D silicon detector, demonstrating its potential for precise timing applications and comparing it with LGADs through measurements and simulations.

## Contribution

It provides the first detailed timing performance analysis of a 3D silicon detector with a 50x50 um2 cell, including experimental validation and comparison with LGADs.

## Key findings

- Timing resolution around 30 ps at 150 V and -20°C.
- Timing performance improves with higher bias, lower temperature, and smaller cell size.
- Good agreement between measurements and simulations validates the models.

## Abstract

A silicon 3D detector with a single cell of 50x50 um2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with dedicated electronics used also for determining time resolution of Low Gain Avalanche Detectors (LGADs). The measurements were compared to those with LGADs and also simulations. The studies showed that the dominant contribution to the timing resolution comes from the time walk originating from different induced current shapes for hits over the cell area. This contribution decreases with higher bias voltages, lower temperatures and smaller cell sizes. It is around 30 ps for a 3D detector of 50x50 um2 cell at 150 V and -20C, which is comparable to the time walk due to Landau fluctuations in LGADs. It even improves for inclined tracks and larger pads composed of multiple cells. A good agreement between measurements and simulations was obtained, thus validating the simulation results.