Chalcogen assisted contact engineering: towards CMOS integration of Tungsten Diselenide Field Effect Transistors

TL;DR

This paper introduces a chalcogen-based surface modification technique for tungsten diselenide (WSe2) FETs, enabling ambipolar behavior and p-n transition, advancing the development of scalable 2D CMOS integrated circuits.

Contribution

It presents a novel dry chemistry method to modify WSe2 surfaces, achieving enhanced ambipolarity and p-type behavior for 2D FETs, crucial for CMOS integration.

Findings

Achieved ambipolar conduction in WSe2 FETs.

Demonstrated complete n to p-type transition.

Proposed a scalable technique for 2D CMOS circuits.

Abstract

One of the major roadblocks for the establishment of 2D semiconductor technology for CMOS integrated circuits is lack of industry scalable doping techniques that lead to 2D FETs with comparable n-type and p-type behavior. Here we demonstrate a Chalcogen based technique to alter the surface of WSe2 to realize enhanced ambipolar behavior along with a complete transition from n to p-type behavior of WSe2 FETs. The technique involves dry chemistry between Chalcogen atom and TMDC surface which leads to surface states that cause improved hole and electron injection through the FETs. We propose such a technique for realization of all WSe2 based CMOS integrated circuits and therefore unveil its potential towards technology.