# A wet etching method for few-layer black phosphorus with an atomic accuracy and compatibility with major lithography techniques

## TL;DR

This paper introduces a precise wet etching technique for few-layer black phosphorus that achieves atomic accuracy, is compatible with standard lithography, and enables scalable device fabrication.

## Contribution

A novel wet etching process for black phosphorus with atomic layer precision, compatible with common lithography methods, facilitating large-scale device manufacturing.

## Key findings

- Achieved atomic layer accuracy in black phosphorus etching.
- Compatible with deep-UV and e-beam lithography.
- Suitable for large-scale black phosphorus device fabrication.

## Abstract

This paper reports a few-layer black phosphorus thickness pattern fabricated by a top-down nanofabrication approach. This was achieved by a new wet etching process that can etch selected regions of few-layer black phosphorus with an atomic layer accuracy. This method is deep-UV and e-beam lithography process compatible,and is free of oxygen and other common doping sources. It provides a feasible patterning approach for largescale manufacturing of few-layer BP materials and devices.