# Novel method to study strain effect of thin films using a piezoelectric-based device and a flexible metallic substrate

## TL;DR

This paper introduces a new method combining a piezoelectric device and metallic substrates to apply and study uniaxial strain effects on functional thin films, enabling precise measurement of strain-induced property changes.

## Contribution

The paper presents a novel approach for applying uniaxial strain to thin films using a piezoelectric device and metallic substrates, allowing detailed strain effect studies.

## Key findings

- Strain-induced shift of superconducting transition temperature in Co-doped BaFe2As2.
- Uniaxial strain derivative of Curie temperature in Mn3CuN.
- Method applicable across various functional thin films and temperature ranges.

## Abstract

For applying tensile or compressive uniaxial strain to functional thin films, we propose a novel approach in combining a piezoelectric-based device and a technical metallic substrate used widely in the 2nd generation coated conductors (i.e. superconducting tapes). A strain-induced shift of the superconducting transition temperature of 0.1 K for Co-doped BaFe2As2 was observed along [100] direction, corresponding to a uniaxial pressure derivative dTc/dp100=-4 K/GPa. For Mn3CuN, a uniaxial strain derivative along [100] direction of the Curie temperature dTC/de100=13 K/% was observed. The current approach is applicable to various functional thin films in a wide range of temperatures.