Demonstration of a strain-mediated magnetoelectric write and read unit in a Co60Fe20B20/ Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructure
Tingting Shen, Vaibhav Ostwal, Kerem Y. Camsari, Joerg Appenzeller

TL;DR
This paper demonstrates a room-temperature, strain-mediated magnetoelectric write and read system in a heterostructure, enabling magnetic state control and detection without magnetic fields, with results aligning with a theoretical model.
Contribution
It introduces a novel magnetoelectric heterostructure that enables simultaneous write and read operations via strain effects without symmetry breaking magnetic fields.
Findings
Magnetic easy axis can be rotated by applying voltage.
Magnetization changes induce measurable piezoelectric potentials.
Experimental results agree with a theoretical equivalent circuit model.
Abstract
Taking advantage of the Magnetoelectric (ME) and its inverse effect, this article demonstrates strain-mediated magnetoelectric write and read operations simultaneously in Co60Fe20B20/ Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructures without using any symmetry breaking magnetic field at room temperature. By applying an external DC-voltage across a (011)-cut PMN-PT substrate, the ferroelectric polarization is re-oriented, which results in an anisotropic in-plane strain that transfers to the CoFeB thin film and changes its magnetic anisotropy Hk. The change in Hk in-turn results in a 90o rotation of the magnetic easy axis for sufficiently high voltages. Simultaneously, the inverse effect is employed to read changes of the magnetic properties. Because the Piezoelectric (PE)/FerroMagnetic (FM) system is fully coupled, the change of magnetization in FM induces an elastic stress in the PE layer,…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
