# Modeling of Radiation-Induced Defect Recovery in 3C-SiC Under High Field Bias Conditions

## TL;DR

This study investigates how high electric fields influence defect recovery in 3C-SiC during radiation exposure, revealing that fields below breakdown levels can enhance defect healing through localized heating effects.

## Contribution

It introduces a combined Monte Carlo and molecular dynamics approach to analyze the impact of electric fields on radiation-induced defect recovery in 3C-SiC.

## Key findings

- High electric fields increase localized heating during ion strikes.
- Enhanced defect recovery occurs under fields below device breakdown.
- Field effects could improve radiation tolerance in 3C-SiC devices.

## Abstract

In this work, the implications of high field bias conditions in radiation-induced defect recovery in 3C-SiC crystals is studied. It is well known that transient heating effects (or thermal spikes) occur when energetic swift heavy ions (SHIs) deposit energy to the surrounding medium via ionization. Here, we explore the dynamics of this transient event under high background electric fields in 3C-SiC, which is what occurs when an ion strike coincides with field-sensitive volumes. In this study, we use the Ensemble Monte Carlo method to quantify how the energy deposition of the ionized regions change in response to high background electric fields. Subsequently, we study the relationship between the radiation-induced thermal spike and defect recovery using molecular dynamics simulations. We find that field strengths below the critical breakdown of wide bandgap devices are sufficient to exacerbate the localized heating, which subsequently enhances the defect recovery effect. This work is beneficial for 3C-SiC electronics and materials used in high radiation environments.