# Quantum Interference Theory of Magnetoresistance in Dirac Materials

## TL;DR

This paper develops a quantum interference theory to explain the complex magnetoresistance behaviors in Dirac materials, highlighting the interplay of weak localization and antilocalization effects across different conditions.

## Contribution

It introduces a new formula for magnetoconductivity in Dirac fermions, revealing the crossover from positive to negative magnetoresistance due to quantum interference effects.

## Key findings

- Uncovered the crossover from positive to negative magnetoresistivity.
- Identified the competition between weak localization and weak antilocalization.
- Highlighted the role of band coupling in quantum interference transport.

## Abstract

Magnetoresistance in many samples of Dirac semimetal and topological insulator displays non-monotonic behaviors over a wide range of magnetic field. Here a formula of magnetoconductivity is presented for massless and massive Dirac fermions in Dirac materials due to quantum interference in scalar impurity scattering potentials. It reveals a striking crossover from positive to negative magnetoresistivity, uncovering strong competition between weak localization and weak antilocalization in multiple Cooperon modes at different chemical potentials, effective masses and finite temperatures. The work sheds light on the important role of strong coupling of the conduction and valence bands in the quantum interference transport in topological nontrivial and trivial Dirac materials.