# Switching behavior of bulk Fast Ion Conducting AgI-Ag2O-MoO3 glasses with inert electrode

## TL;DR

This study investigates the switching behavior of bulk AgI-Ag2O-MoO3 glasses with inert electrodes, revealing an electrochemical metallization mechanism that results in irreversible, memory-type switching suitable for resistive memory applications.

## Contribution

It demonstrates that inert electrodes induce irreversible switching via electrochemical metallization in AgI-based glasses, clarifying the switching mechanism and identifying optimal compositions for performance.

## Key findings

- Switching is irreversible and memory-type with inert electrodes.
- Switching mechanism is electrochemical metallization involving cation transport.
- Optimal composition region exhibits faster threshold voltage achievement and lower power loss.

## Abstract

Developing efficient, fast performing and thermally stable Silver iodide based fast ion conducting solids are of great interest for resistive switching applications, but still remain challenges. Metallization in bulk, behavior of threshold voltage profile over composition and corrosion reactions are few of these challenges. In this work, the switching behavior of bulk, fast ion conducting, vitreous (AgI)x-(Ag2O)25-(MoO3)75-x, for 60 < x < 40 solids, has been investigated, in order to understand the switching mechanism with theinert electrodes. By using inert electrodes, the switching becomes irreversible, memory type. The switching mechanism is electrochemical metallization process. The inert electrodes restrain ionic mass transfer but exhibit low barrier to electron transfer allowing the cathodic metallization reaction to reach Nernst equilibrium faster. Cations involved in this process transport thorough the free volume within the solid structure and follows Mott-Gurney model for electric field driven thermally activated ion hopping conductivity model. This model along with the thermal stability profile provide a narrow region within composition with better switching performance based on swiftness to reach threshold voltage and less power loss. Traces of anionic contribution to metallization are absent. Moreover, anodic oxidation involves reactions that cause bubble formation and corrosion.

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Source: https://tomesphere.com/paper/1901.00743