Rapid high-fidelity gate-based spin read-out in silicon
G. Zheng, N. Samkharadze, M. L. Noordam, N. Kalhor, D. Brousse, A., Sammak, G. Scappucci, L. M. K. Vandersypen

TL;DR
This paper demonstrates rapid, high-fidelity, on-chip gate-based spin read-out in silicon quantum dots, significantly reducing measurement time and enabling scalable quantum computing architectures.
Contribution
The authors introduce an on-chip superconducting resonant circuit for spin read-out, achieving single-shot measurements with over 98% fidelity in 6 microseconds, surpassing previous methods.
Findings
Achieved a signal-to-noise ratio of about six within 1 microsecond.
Demonstrated single-shot spin state read-out with >98% fidelity in 6 microseconds.
Enabled frequency multiplexed read-out without external electrometers.
Abstract
Silicon spin qubits form one of the leading platforms for quantum computation. As with any qubit implementation, a crucial requirement is the ability to measure individual quantum states rapidly and with high fidelity. As the signal from a single electron spin is minute, different spin states are converted to different charge states. Charge detection so far mostly relied on external electrometers, which hinders scaling to two-dimensional spin qubit arrays. As an alternative, gate-based dispersive read-out based on off-chip lumped element resonators were introduced, but here integration times of 0.2 to 2 ms were required to achieve single-shot read-out. Here we connect an on-chip superconducting resonant circuit to two of the gates that confine electrons in a double quantum dot. Measurement of the power transmitted through a feedline coupled to the resonator probes the charge…
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Taxonomy
TopicsQuantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices
