# Disordered contacts can localize chiral edge electrons

## TL;DR

This paper demonstrates that contact disorder in quantum Hall systems can induce localization of chiral edge electrons, leading to measurable deviations in resistance that are sensitive to contact quality and can be suppressed by inelastic scattering.

## Contribution

It reveals how all-contact disorder causes localization corrections in chiral edge modes, a phenomenon previously thought immune to backscattering effects.

## Key findings

- Localization correction increases with contact disorder
- Correction decreases as the number of contacts increases
- Inelastic scattering can eliminate the localization correction

## Abstract

Chiral integer quantum Hall (QH) edge modes are immune to backscattering and therefore are non-localized and show a vanishing longitudinal as well as non-local resistance along with quantized 2-terminal and Hall resistance even in the presence of sample disorder. However, this is not the case for contact disorder, which refers to the possibility that a contact can reflect edge modes either partially or fully. This paper shows that when all contacts are disordered in a N-terminal quantum Hall bar, then transport via chiral QH edge modes can have a significant localization correction. The Hall and 2-terminal resistance in an N-terminal quantum Hall sample deviate from their values derived while neglecting the phase acquired at disordered contacts, and this deviation is called the quantum localization correction. This correction term increases with the increase of disorderedness of contacts but decreases with the increase in the number of contacts in an N-terminal Hall bar. The presence of inelastic scattering, however, can completely destroy the quantum localization correction.