Growth, Characterization and High Field Magneto-Conductivity of Co0.1Bi2Se3 Topological Insulator
Rabia Sultana (CSIR-NPL), Ganesh Gurjar (JNU), S. Patnaik (JNU) and, V.P.S. Awana (CSIR-NPL)

TL;DR
This study investigates the growth, structural, and magneto-transport properties of Co-doped Bi2Se3 topological insulator crystals, revealing surface-dominated conduction, magnetic ordering, and changes in magneto-resistance due to cobalt addition.
Contribution
It provides new insights into the effects of cobalt doping on the structural, magnetic, and transport properties of Bi2Se3 topological insulators, including magneto-conductivity analysis and magnetic behavior characterization.
Findings
Cobalt doping increases lattice parameters and Raman shifts.
Magneto-resistance decreases with Co addition, indicating altered surface conduction.
Co-doped Bi2Se3 exhibits ferromagnetic and diamagnetic behavior depending on the measurement technique.
Abstract
We report the crystal growth as well as transport properties of Co added Bi2Se3 single crystals. The values of the lattice parameters a and b for Co added sample were observed to increase as compared to the pure Bi2Se3. The Raman spectroscopy displayed higher Raman shift of corresponding vibrational modes for Co0.1Bi2Se3, and the resistivity curves with and without applied magnetic field shows a metallic behaviour. Both the crystals were subjected to magneto-resistance (MR) measurements under applied fields of 14Tesla. The value of MR is found to decrease from about 380 (5K, 14 Tesla) for Bi2Se3 to 200 degree for Co0.1Bi2Se3. To elaborate the transport properties of pure and Co added Bi2Se3 crystals, the magneto-conductivity is fitted to the HLN (Hikami Larkin Nagaoka) equation and it is found that the charge conduction is mainly dominated by surface driven WAL (weak anti-localization)…
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