Spin coherence as a function of depth for high-density ensembles of silicon vacancies in proton-irradiated 4H-SiC

TL;DR

This study investigates how the coherence of silicon vacancy spins in 4H-SiC varies with depth, revealing dephasing interactions that impact the development of scalable quantum devices using defect ensembles.

Contribution

It provides the first detailed analysis of depth-dependent spin coherence for silicon vacancies created by proton irradiation in 4H-SiC.

Findings

Coherence varies with depth in proton-irradiated 4H-SiC.

Dephasing interactions with the bulk crystal environment are observed.

Results inform scalable fabrication of silicon carbide quantum devices.

Abstract

Defects in wide-bandgap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has recently emerged as a new candidate for optical control of single spin qubit with significant material benefits over nitrogen vacancies in diamond. In this work, we present a study of the coherence of silicon vacancies generated via proton irradiation as a function of implantation depth. We show clear evidence of dephasing interactions between the silicon vacancies and the spin environment of the bulk crystal. This result will inform further routes toward fabrication of scalable silicon carbide devices and studies of spin interactions of in high-density ensembles of defects.