# New generation of moir\'e superlattices in doubly aligned hBN/graphene/hBN heterostructures

## TL;DR

This paper demonstrates the creation of complex moiré superlattices in fully aligned hBN/graphene/hBN heterostructures, enabling novel electronic band structures through the overlay of multiple superlattices.

## Contribution

It introduces a new method of engineering electronic properties by stacking two moiré superlattices in fully aligned hBN/graphene/hBN heterostructures, resulting in larger periodicities.

## Key findings

- Two distinct moiré superlattices form with top and bottom hBN layers.
- Overlay of superlattices can produce a third superlattice with larger period.
- A simple model explains the formation of larger superlattice periods.

## Abstract

The specific rotational alignment of two-dimensional lattices results in a moir\'e superlattice with a larger period than the original lattices and allows one to engineer the electronic band structure of such materials. So far, transport signatures of such superlattices have been reported for graphene/hBN and graphene/graphene systems. Here we report moir\'e superlattices in fully hBN encapsulated graphene with both the top and the bottom hBN aligned to the graphene. In the graphene, two different moir\'e superlattices form with the top and the bottom hBN, respectively. The overlay of the two superlattices can result in a third superlattice with a period larger than the maximum period (14 nm) in the graphene/hBN system, which we explain in a simple model. This new type of band structure engineering allows one to artificially create an even wider spectrum of electronic properties in two-dimensional materials.