Voltage control of the long-range p-d exchange coupling in a ferromagnet-semiconductor quantum well hybrid structure
V.L. Korenev, I.V. Kalitukha, I.A. Akimov, V.F. Sapega, E.A. Zhukov,, E. Kirstein, O.S. Ken, D. Kudlacik, G. Karczewski, M. Wiater, T. Wojtowicz,, N.D. Ilyinskaya, N.M. Lebedeva, T.A. Komissarova, Yu.G. Kusrayev, D.R., Yakovlev, and M. Bayer

TL;DR
This paper demonstrates voltage-controlled exchange coupling in a ferromagnet-semiconductor quantum well hybrid, using a novel phonon-mediated mechanism that allows for efficient, reversible magnetic control at moderate electric fields.
Contribution
It introduces a new electric field control mechanism for exchange coupling mediated by elliptically polarized phonons, differing from traditional wavefunction redistribution methods.
Findings
Exchange coupling reaches up to 2.5 Tesla.
The coupling can be turned on and off with 1 V bias.
Control is achieved via phononic ac Stark effect, not wavefunction redistribution.
Abstract
Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable reversibility and compatibility with semiconductor technology. Hybrid structures based on the assembly of ferromagnetic and semiconducting building blocks are attractive candidates in that respect as such systems bring together the properties of the isolated constituents: They are expected to show magnetic order as a ferromagnet and to be electrically tunable as a semiconductor. Here we demonstrate the electrical control of the exchange coupling in a hybrid consisting of a ferromagnetic Co layer and a semiconductor CdTe quantum well, separated by a thin non-magnetic (Cd,Mg)Te barrier. The effective magnetic field of the exchange interaction reaches up to 2.5…
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