# Uniaxial Strain Effects on Graphene Nanoribbon Resonant Tunneling Transistors

## TL;DR

This study numerically investigates how uniaxial strain influences the current-voltage characteristics of graphene nanoribbon resonant tunneling transistors, revealing strain-dependent reductions and peak broadening effects.

## Contribution

It provides the first detailed numerical analysis of uniaxial strain effects on graphene nanoribbon tunneling devices using tight-binding and Green's function methods.

## Key findings

- Strain reduces the current in the device.
- Applying strain in the armchair direction widens the main current peak.
- Current decreases more rapidly under armchair strain than zigzag strain.

## Abstract

The effect of the uniaxial strain on the current-voltage characteristic of a typical armchair graphene-nanoribbon-hBN heterostructure device is simulated numerically by employing the nearest-neighbor tight-binding model and the non-equilibrium Green's function formalism. Simulations clearly reveal the following notable dependencies: (i) the strain invariably reduces the current; (ii) the strain applied in the armchair direction markedly widens the main peak of the current over a larger region of the bias voltage compared with the unstrained state; (iii) the current decreases faster when the strain is applied in the armchair rather than the zigzag direction.