# Electric field tuning of the anomalous Hall effect at oxide interfaces

## TL;DR

This paper demonstrates that applying an external electric field at oxide interfaces can tune the anomalous Hall effect by modifying spin-orbit coupling and Berry curvature, with potential applications in spintronics.

## Contribution

It introduces a method to control the anomalous Hall effect via electric fields at oxide interfaces, combining theoretical modeling and density-functional calculations.

## Key findings

- Electric field alters the Rashba interaction at oxide interfaces.
- The anomalous Hall conductivity shows quadratic dependence on small electric fields.
- Density-functional calculations confirm the tunability at iridate interfaces.

## Abstract

We show that the anomalous Hall effect (AHE) at a magnetic interface with strong spin-orbit coupling can be tuned with an external electric field. By altering the strength of the inversion symmetry breaking, the electric field changes the Rashba interaction, which in turn modifies the magnitude of the Berry curvature, the central quantity in determining the anomalous Hall conductivity (AHC). The effect is illustrated with a square lattice model, which yields a quadratic dependence of the AHC for small electric fields. Explicit density-functional calculations were performed for the recently grown iridate interface, viz., the (SrIrO$_3$)$_1$/(SrMnO$_3$)$_1$ (001) structure, both with and without an electric field. The effect may be potentially useful in spintronics applications.