# Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene

## TL;DR

This paper reports the successful growth of defect-free SnTe topological crystalline insulator nanowires on graphene, revealing their structural properties and the need for protective capping to preserve their topological surface states.

## Contribution

It demonstrates a novel epitaxial growth method for defect-free SnTe nanowires on graphene and analyzes their structural and surface properties.

## Key findings

- Nanowires grow along [001] direction with {100} sidewalls.
- Nanowires are free from structural defects.
- Sidewalls are prone to oxidation, requiring protective capping.

## Abstract

SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have cubic rock-salt structure, they grow along [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with Dirac dispersion. Thorough high resolution transmission electron microscopy investigations show that the nanowires grow on graphene in the van der Walls epitaxy mode induced when the catalyzing Au nanoparticle mixes with Sn delivered from SnTe flux, providing liquid Au-Sn alloy. The nanowires are totally free from structural defects, but their {001} sidewalls are prone to oxidation, which points out on necessity of depositing protective capping in view of exploiting the magneto-electric transport phenomena involving charge carriers occupying topologically protected states.