# Large and tunable negative refractive index via electromagnetically induced chirality in a semiconductor quantum well nanostructure

## TL;DR

This paper demonstrates that a large, tunable negative refractive index can be achieved in semiconductor quantum wells by using electromagnetically induced chirality, with control via laser fields and phase adjustments, offering new possibilities for NRI materials.

## Contribution

It introduces a method to realize and control negative refractive index in semiconductor quantum wells through electromagnetically induced chirality, based on experimental parameters.

## Key findings

- Large and controllable NRI can be achieved in SQWs.
- NRI frequency regions can be sensitively manipulated.
- The scheme offers a new approach for NRI materials in solid-state nanostructures.

## Abstract

Large and tunable negative refractive index (NRI) via electromagnetically induced chirality is demonstrated in a semiconductor quantum wells (SQWs) nanostructure by using the reported experimental parameters. It is found: under the experimental results of Ref.[19], the large and controllable NRI can be theoretically obtained in the SQWs sample by modulating the coupling laser field and relative phase, and the frequency regions for NRI can also be sensitively manipulated by them, which will more increase flexibility in implementation of NRI material. The scheme rooted in the experimental results may lead a new avenue to NRI material in solid-state nanostructure.