# Effects of layer stacking and strain on electronic transport in 2D tin monoxide

## TL;DR

This study explores how layer stacking and strain influence electron-phonon interactions and mobility in 2D tin monoxide, revealing bilayer structures and compressive strain effects that enhance electronic transport properties.

## Contribution

It provides a systematic analysis of the effects of layer structures and strain on electron-phonon coupling and mobility in SnO, highlighting the superior transport in bilayer and strain-induced valley effects.

## Key findings

- Bilayer SnO exhibits better electronic transport due to orbital hybridization.
- Compressive strain induces valley formation and modifies electron-phonon coupling.
- A2u phonon mode is the main contributor to electron-phonon interactions.

## Abstract

Tin monoxide is an interesting two-dimensional material because of the rare oxide semiconductor with bipolar conductivity. However, the lower room temperature mobility limits the applications of SnO in the future. Thus, we systematically investigate the effects of the different layer structures and strains on the electron-phonon coupling and phonon-limited mobility of SnO. The A2u phonon mode in the high frequency region is the main contributor coupling with electron for the different layer structures. And the orbital hybridization of Sn atoms existing only in bilayer structure changes the conduction band edge and decreases the electron-phonon coupling conspicuously, thus the electronic transport performance of bilayer is superior to others. In addition, the compressive strain of -1.0% in monolayer structure makes CBM consist of two valleys at Gamma point and along M-Gamma line, also leads to the intervalley electronic scattering assisted by Eg-1 mode. However, the electron-phonon coupling regional transferring from high frequency (A2u) to low frequency (Eg-1) results in the little significant change of mobility.