Evaluating Row Buffer Locality in Future Non-Volatile Main Memories
Justin Meza, Jing Li, Onur Mutlu

TL;DR
This paper explores the potential of small row buffers in non-volatile memories (NVMs) like PCM, STT-RAM, and RRAM, demonstrating energy savings and performance benefits over traditional DRAM architectures.
Contribution
It introduces architectural modifications, a memory access protocol, and models for small row buffers in NVMs, enabling system-level evaluation of their tradeoffs.
Findings
Reducing row buffer size in NVMs decreases energy consumption.
Small row buffers can maintain endurance levels comparable to larger buffers.
In some cases, smaller buffers improve system performance.
Abstract
DRAM-based main memories have read operations that destroy the read data, and as a result, must buffer large amounts of data on each array access to keep chip costs low. Unfortunately, system-level trends such as increased memory contention in multi-core architectures and data mapping schemes that improve memory parallelism may cause only a small amount of the buffered data to be accessed. This makes buffering large amounts of data on every memory array access energy-inefficient. Emerging non-volatile memories (NVMs) such as PCM, STT-RAM, and RRAM, however, do not have destructive read operations, opening up opportunities for employing small row buffers without incurring additional area penalty and/or design complexity. In this work, we discuss architectural changes to enable small row buffers at a low cost in NVMs. We provide a memory access protocol, energy model, and timing model…
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