Experimental evidence of monolayer arsenene: An exotic two-dimensional semiconducting material

TL;DR

This paper reports the successful experimental synthesis and characterization of monolayer arsenene on Ag(111), confirming its structure and electronic properties, including an indirect band gap of about 1.4 eV, supporting its potential for electronic applications.

Contribution

First experimental demonstration of freestanding-like monolayer arsenene on Ag(111), validating theoretical predictions about its structure and electronic properties.

Findings

Arsenene forms a buckled honeycomb structure on Ag(111).

Monolayer arsenene has an indirect band gap of approximately 1.4 eV.

Experimental data agrees with theoretical calculations.

Abstract

Group V element analogues of graphene have attracted a lot attention recently due to their semiconducting band structures, which make them promising for next generation electronic and optoelectronic devices based on two-dimensional materials. Theoretical investigations predict high electron mobility, large band gaps, band gap tuning by strain, formation of topological phases, quantum spin Hall effect at room temperature, and superconductivity amongst others. Here, we report a successful formation of freestanding like monolayer arsenene on Ag(111). This was concluded from our experimental atomic and electronic structure data by comparing to results of our theoretical calculations. Arsenene forms a buckled honeycomb layer on Ag(111) with a lattice constant of 3.6 {\AA} showing an indirect band gap of about 1.4 eV as deduced from the position of the Fermi level pinning.