A Novel PN junction between Mechanically Exfoliated \b{eta}-Ga2O3 and p-GaN

TL;DR

This paper reports the fabrication and characterization of pn junctions between mechanically exfoliated ultrawide bandgap beta-Ga2O3 and p-GaN, demonstrating promising rectification and temperature-dependent performance improvements.

Contribution

It introduces a detailed mechanical exfoliation process for beta-Ga2O3 and explores its integration with p-GaN to form functional pn junctions with improved diode characteristics.

Findings

Rectification ratio around 541.3 at V+5/V-5

Device performance improves from 25°C to 200°C

Ideal threshold voltage approaches 3.2 V with increased beta-Ga2O3 thickness

Abstract

Several pn junctions were constructed from mechanically exfoliated ultrawide bandgap (UWBG) beta-phase gallium oxide (\b{eta}-Ga2O3) and p-type gallium nitride (GaN). The mechanical exfoliation process, which is described in detail, is similar to that of graphene and other 2D materials. Atomic force microscopy (AFM) scans of the exfoliated \b{eta}-Ga2O3 flakes show very smooth surfaces with average roughness of 0.647 nm and transmission electron microscopy (TEM) scans reveal flat, clean interfaces between the \b{eta}-Ga2O3 flakes and p-GaN. The device showed a rectification ratio around 541.3 (V+5/V-5). Diode performance improved over the temperature range of 25{\deg}C and 200{\deg}C, leading to an unintentional donor activation energy of 135 meV. As the thickness of exfoliated \b{eta}-Ga2O3 increases, ideality factors decrease as do the diode turn on voltages, tending toward an ideal threshold voltage of 3.2 V as determined by simulation. This investigation can help increase study of novel devices between mechanically exfoliated \b{eta}-Ga2O3 and other materials.