# Spin-Splitting and Rashba-Effect at Mono-Layer GaTe in the Presence of Strain

## TL;DR

This study investigates how biaxial and uniaxial strain affect the spintronic properties, band structure, and Rashba effect in mono-layer GaTe, revealing tunable spin-splitting and Mexican-hat dispersion influenced by symmetry and strain.

## Contribution

It provides new insights into strain-induced tuning of spin-splitting and Rashba effects in mono-layer GaTe, highlighting the role of symmetry and spin-orbit coupling.

## Key findings

- Strain modifies the band gap and Mexican-hat dispersion in GaTe.
- Inversion symmetric structures show no spin-splitting under strain.
- Rashba dispersion can be induced and tuned by strain in GaTe.

## Abstract

In this paper, spintronic properties of the mono-layer GaTe under biaxial and uniaxial strain is investigated. Here, spin properties of two structures of GaTe, one with mirror symmetry and the other with inversion symmetry, is studied. We have also calculated the band structure of GaTe with and without spin-orbit coupling to find out the importance of spinorbit interaction (SOI) on its band structure. We find band gap can be modified by applying spin-orbit coupling in the presence of strain. We explore Mexican-hat dispersion for different structures and different strain. We find Mexican-hat can be tuned however some cases shows any Mexican-hat. We calculate spin-splitting in conduction and valence band in the presence of strain where the structure with inversion symmetry doesn't show any splitting. We find in some cases, GaTe indicates Rashba dispersion that can be adjusted by strain. The amount of Rashba parameters may be in the order of other reported two-dimensional materials.