Microwave impedance readout of a hafnium microbridge detector
A. V. Merenkov (1), V. I. Chichkov (1), A. B. Ermakov (1,2), A. V., Ustinov (1,3), S. V. Shitov (1,2) ((1) National University of Science and, Technology MISiS, Moscow, Russia, (2) Kotelnikov Institute of Radio, Engineering, Electronics, Moscow, Russia

TL;DR
This paper introduces a microwave impedance-based electron thermometry method using a hafnium microbridge detector, enabling THz-range detection with microwave readout and multiplexing capabilities.
Contribution
It demonstrates a novel microwave impedance readout technique for hafnium micro-absorbers, advancing THz-range detectors with potential for multiplexed applications.
Findings
Device responds smoothly to microwave power at 50-350 mK.
Absorbed power fits hot electron gas model with n=5...6.
Estimated NEP of 10^-18 W/Hz^(-1/2) at 200 mK.
Abstract
We present proof-of-operation for a new method of electron thermometry using microwave impedance of a hafnium micro-absorber. The new method leads to an ultimate THz-range detector suitable for microwave readout and frequency division multiplexing. The sensing part of the device is a hot-electron-gas absorber responding to the incident radiation by variation of its impedance measured at probing frequency about 1.5 GHz. The absorber is a microbridge made from hafnium (Tc = 375 mK, RN = 30 Ohm) sized 2.5 um by 2.5 um by 50 nm and integrated with a planar 600-700 GHz antenna placed near the open end of a quarter-wave CPW resonator (Q-factor about 10^4). All elements of the circuit, except the microbridge, are made from 100-nm thick Nb, including the resonator, which is weakly coupled to a throughput line. The device was tested at 50-350 mK smoothly responding with its transmission…
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Taxonomy
TopicsSuperconducting and THz Device Technology · Semiconductor Quantum Structures and Devices · Quantum and electron transport phenomena
