Design and Analysis of a multiple quantum-well plasmonic Germanium/Silicon-Germanium nanolaser

TL;DR

This paper presents a theoretical design of a CMOS-compatible Ge/SiGe nanolaser with a tiny footprint, room temperature operation, and high modulation bandwidth, suitable for integrated photonics.

Contribution

It introduces a novel Ge/SiGe multiple quantum well nanolaser design and provides a detailed theoretical analysis of its performance and compatibility.

Findings

Outputs 3.83μW at 1550nm with 1μA injection current

Achieves a modulation bandwidth of 24.5GHz

Features a footprint of only 0.07μm²

Abstract

There are many researches reported in using Germanium in Silicon based lasers but acquiring this potential for a nanolaser may also be important for development of a CMOS compatible plasmon source. In this paper, a Ge/SiGe multiple quantum well waveguide integrated nanolaser is introduced and theoretically investigated. This structure is simulated and by means of a semi-classical rate equation model, its performance is studied. The proposed nano laser has a tiny footprint of 0.07um^2, room temperature performance and CMOS compatible fabrication process. The output performance of the proposed structure as estimated, is noticeable. These simulated results, compared with some experiments and redundant software double checking, show acceptable compatibility. In 1550nm output wavelength, it provides 3.83uW output power with 1uA injection current while maintaining its performance in a wide modulation bandwidth of 24.5GHz. This remarkable performance is achieved thanked to a Purcell factor equal to 2208.