# Dislocation and node states in bilayer graphene systems

## TL;DR

This paper studies the electronic properties of partial dislocation networks in bilayer graphene, revealing charge accumulation, current flow patterns, and localization behaviors influenced by dislocation configurations.

## Contribution

It provides new insights into how dislocation networks affect electronic states and current flow in bilayer graphene, highlighting the role of partials and intersections.

## Key findings

- Charge accumulation at partials depends on Fermi energy and Burgers vector.
- Current flows spiral along dislocation lines with interlayer components.
- Localization shifts from partials to intersections near the Dirac point.

## Abstract

We investigate the electronic structure of realistic partial dislocation networks in bilayer graphene that feature annihilating, wandering, and intersecting partial lines. We find charge accumulation states at partials that are sensitive to Fermi energy and partial Burgers vector but not to the screw versus edge character of the partial. These states are shown to be current carrying, with the current density executing a spiral motion along the dislocation line with a strong interlayer component to the current. Close to the Dirac point localization on partials switches to localization on intersections of partials, with a corresponding complex current flow around the nodes.