# On-Chip Integration of Single Solid-State Quantum Emitters with a SiO$_2$ Photonic Platform

## TL;DR

This paper demonstrates the deterministic integration of nitrogen-vacancy centers with a SiO2 photonic platform, enabling efficient on-chip quantum photonic devices with low fluorescence and versatile passive structures.

## Contribution

It introduces a scalable method for integrating single solid-state qubits with a SiO2 platform, including experimental demonstration of on-chip excitation and photon coupling.

## Key findings

- Successful deterministic integration of NV centers on SiO2 platform
- Efficient coupling of single photons to guided modes demonstrated
- Platform exhibits ultra-low fluorescence and supports passive structures

## Abstract

One important building block for future integrated nanophotonic devices is the scalable on-chip interfacing of single photon emitters and quantum memories with single optical modes. Here we present the deterministic integration of a single solid-state qubit, the nitrogen-vacancy (NV) center, with a photonic platform consisting exclusively of SiO$_2$ grown thermally on a Si substrate. The platform stands out by its ultra-low fluorescence and the ability to produce various passive structures such as high-Q microresonators and mode-size converters. By numerical analysis an optimal structure for the efficient coupling of a dipole emitter to the guided mode could be determined. Experimentally, the integration of a preselected NV emitter was performed with an atomic force microscope and the on-chip excitation of the quantum emitter as well as the coupling of single photons to the guided mode of the integrated structure could be demonstrated. Our approach shows the potential of this platform as a robust nanoscale interface of on-chip photonic structures with solid-state qubits.