Covalent-bonding-induced strong phonon scattering in the atomically thin WSe2 layer
Young-Gwan Choi, Do-Gyeom Jeong, H. I. Ju, C. J. Roh, Geonhwa Kim,, Bongjin Simon Mun, Tae Yun Kim, Sang-Woo Kim, and J. S. Lee

TL;DR
This study investigates how covalent bonding affects phonon scattering and thermal transport in atomically thin WSe2 layers, revealing layer-dependent thermal boundary resistance influenced by metal bonding strength.
Contribution
It demonstrates that covalent bonding at metal-WSe2 interfaces significantly alters phonon scattering and thermal boundary resistance, especially in bi-layered structures.
Findings
Stronger metal bonding reduces TBR in monolayers but increases it in bilayers.
Phonon mismatch at WSe2-WSe2 interfaces dominates thermal resistance in bilayers.
Metallization modifies WSe2 electronic states and symmetry, affecting thermal transport.
Abstract
In nano-device applications using 2D van der Waals materials, a heat dissipation through nano-scale interfaces can be a critical issue for optimizing device performances. By using a time-domain thermoreflectance measurement technique, we examine a cross-plane thermal transport through mono-layered (n=1) and bi-layered (n=2) WSe2 flakes which are sandwiched by top metal layers of Al, Au, and Ti and the bottom Al2O3 substrate. In these nanoscale structures with hetero- and homo-junctions, we observe that the thermal boundary resistance (TBR) is significantly enhanced as the number of WSe2 layers increases. In particular, as the metal is changed from Al, to Au, and to Ti, we find an interesting trend of TBR depending on the WSe2 thickness; when referenced to TBR for a system without WSe2, TBR for n=1 decreases, but that for n=2 increases. This result clearly demonstrates that the stronger…
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Taxonomy
TopicsThermal properties of materials · 2D Materials and Applications · Advanced Thermoelectric Materials and Devices
