# Multilayer ion trap technology for scalable quantum computing and quantum simulation

## TL;DR

This paper introduces a new multilayer ion trap fabrication technique that supports scalable quantum computing and simulation by integrating 3D microwave circuitry, demonstrated with trapping and controlling beryllium ions.

## Contribution

A novel multilayer ion trap fabrication method enabling scalable quantum devices with integrated microwave circuitry.

## Key findings

- Successful fabrication of a multilayer ion trap with 3D microwave circuitry.
- Demonstrated ion trapping and microwave control of $^{9}$Be$^{+}$ ions.
- Trap supports scalable quantum information processing.

## Abstract

We present a novel ion trap fabrication method enabling the realization of multilayer ion traps scalable to an in principle arbitrary number of metal-dielectric levels. We benchmark our method by fabricating a multilayer ion trap with integrated three-dimensional microwave circuitry. We demonstrate ion trapping and microwave control of the hyperfine states of a laser cooled $\,^{9}$Be$^{+}$ ion held at a distance of 35$\,\mu$m above the trap surface. This method can be used to implement large-scale ion trap arrays for scalable quantum information processing and quantum simulation.